Laser-Irradiation Effects on the Incorporation of Impurities in GaAs during MOVPE Growth

Autor:	Hiroshi Kukimoto, Mamoru Ishizaki, Yuzaburoh Ban, Hiroshi Murata, Masaru Takechi
Rok vydání:	1987
Předmět:	Dopant Excimer laser Chemistry business.industry medicine.medical_treatment General Engineering General Physics and Astronomy Mineralogy Crystal growth Epitaxy Laser law.invention law medicine Optoelectronics Irradiation Metalorganic vapour phase epitaxy Thin film business
Zdroj:	Japanese Journal of Applied Physics. 26:L1251
ISSN:	1347-4065 0021-4922
Popis:	Laser-irradiation effects on the incorporation of n- and p-type impurities in GaAs have been studied by irradiating the substrate with an ArF excimer laser light during MOVPE growth. An n-type dopant source of TMSi is decomposed effectively by laser excitation, resulting in a dramatic increase in the carrier (electron) concentration. The decomposition of a p-type dopant source of DMZn is not influenced by laser irradiation at a growth temperature of 700°C. Si- or Zn-doped GaAs layers in the irradiated area are of high crystalline quality.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e191d7278ff2d25ebf9d5b4f22426c34 https://doi.org/10.1143/jjap.26.l1251 Zobrazit plný text záznamu