Graphene growth through a recrystallization process in plasma enhanced chemical vapor deposition
| Autor: | Bilge Bekdüz, Wolfgang Mertin, Jonas Twellmann, Jan Mischke, Yannick Beckmann, Gerd Bacher |
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| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Bioengineering 02 engineering and technology Chemical vapor deposition Activation energy 010402 general chemistry 01 natural sciences law.invention symbols.namesake law Plasma-enhanced chemical vapor deposition General Materials Science Electrical and Electronic Engineering Sheet resistance Elektrotechnik Graphene Mechanical Engineering Recrystallization (metallurgy) General Chemistry 021001 nanoscience & nanotechnology 0104 chemical sciences Amorphous carbon Chemical engineering Mechanics of Materials symbols 0210 nano-technology Raman spectroscopy |
| Popis: | Thermal chemical vapour deposition (TCVD) is the current method of choice to fabricate high quality, large area graphene films on catalytic copper substrates. In order to obtain sufficiently high growth rates at reduced growth temperatures an efficient dissociation of the precursor molecules already in the gas phase is required. We used plasma enhanced chemical vapour deposition (PECVD) to fabricate high quality graphene films at various temperatures. The efficient, plasma-induced dissociation of the precursor molecules results in an activation energy of 2.2 eV for the growth rate in PECVD, which is reduced by almost a factor of 2 as compared to TCVD growth in the same reactor. By varying the growth time, we demonstrate that crystalline graphene grains surrounded by amorphous carbon formed during the early stage of growth merge into an almost defect-free graphene film with growth time via a recrystallization process. Almost defect-free graphene is prepared with negligible (IlsubgDl/subg/IlsubgGl/subg l 0.1) contributions of the D peak in Raman spectroscopy and with a sheet resistance down to 470 Ω/sq. |
| Databáze: | OpenAIRE |
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