Monolithic integration of InSb photodetector on silicon for mid-infrared silicon photonics
| Autor: | Kwang Hong Lee, Kian Hua Tan, Satrio Wicaksono, Wan Khai Loke, Bo Wen Jia, Soon Fatt Yoon |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Singapore-MIT Alliance Programme |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Monolithic Integration Photodetector chemistry.chemical_element Mid-infrared Photodetector 02 engineering and technology 01 natural sciences 0103 physical sciences Electrical and Electronic Engineering Leakage (electronics) 010302 applied physics Silicon photonics business.industry 021001 nanoscience & nanotechnology Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Semiconductor chemistry Electrical and electronic engineering [Engineering] Optoelectronics Quantum efficiency 0210 nano-technology business Biotechnology Molecular beam epitaxy Dark current |
| Popis: | The InSb photodetector on a Si substrate acts as a signal receiver for the mid-infrared silicon photonics application to overcome the limitation of group IV semiconductors. In this paper, we demonstrated an InSb p–i–n photodetector with an InAlSb barrier layer grown on (100) silicon substrates via a GaAs/Ge buffer by molecular beam epitaxy. The lattice mismatch between InSb and GaAs was accommodated by an interfacial misfit array. The 50% cutoff detectable wavelength of this detector increased from 5.7 μm at 80 K to 6.3 μm at 200 K. An 80 K detectivity of 8.8 × 109 cmHz1/2 W–1 at 5.3 μm was achieved with a quantum efficiency of 16.3%. The dark current generating mechanism of this detector is both generation–recombination and surface leakage above 140 K, while it is only surface leakage from 120 to 40 K. NRF (Natl Research Foundation, S’pore) Accepted version |
| Databáze: | OpenAIRE |
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