Lowest surface recombination in n-type oxidised crystalline silicon by means of extrinsic field effect passivation

Autor:	Bonilla, R.S., Hamer, P.G., Wilshaw, P.R.
Rok vydání:	2016
Předmět:	Silicon Solar Cells Improvements and Innovation Wafer-Based Silicon Solar Cells and Materials Technology
Popis:	32nd European Photovoltaic Solar Energy Conference and Exhibition; 707-710 Surface recombination remains a major factor limiting the efficiency of silicon solar cells. The postprocessing of dielectric films used as surface coatings has been previously demonstrated an effective technique to improve their passivation quality. In this paper extrinsic methods are demonstrated to produce the lowest reported surface recombination velocity in solar relevant n-type silicon. Recombination velocities below 2.8 cm/s at an injection of 1015 cm-3, are achieved using extrinsic field-effect passivation, or < 0.6 cm/s when using combined extrinsic chemical and extrinsic field effect passivation. These are equivalent to emitter saturation current densities J0e
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e17479ed91067610ef0d8e233dc97008 https://ora.ox.ac.uk/objects/uuid:935728d7-f560-46b4-95ce-8d087ad1eb15 Zobrazit plný text záznamu