InGaAsP as a Promising Narrow Band Gap Semiconductor for Photoelectrochemical Water Splitting
| Autor: | Jennifer Wong-Leung, Parvathala Reddy Narangari, Siva Krishna Karuturi, Mykhaylo Lysevych, Hark Hoe Tan, Chennupati Jagadish, Joshua D. Butson, Yimao Wan |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Photoluminescence business.industry Band gap Energy conversion efficiency 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Photocathode 0104 chemical sciences Narrow band Semiconductor X-ray photoelectron spectroscopy Optoelectronics Water splitting General Materials Science 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 11:25236-25242 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | While photoelectrochemical (PEC) water splitting is a very promising route toward zero-carbon energy, conversion efficiency remains limited. Semiconductors with narrower band gaps can absorb a much greater portion of the solar spectrum, thereby increasing efficiency. However, narrow band gap (∼1 eV) III-V semiconductor photoelectrodes have not yet been thoroughly investigated. In this study, the narrow band gap quaternary III-V alloy InGaAsP is demonstrated for the first time to have great potential for PEC water splitting, with the long-term goal of developing high-efficiency tandem PEC devices. TiO |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|