Signal and Noise in FET-Nanopore Devices
| Autor: | William M. Parkin, Marija Drndic |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Nanowire Bioengineering 02 engineering and technology Signal-To-Noise Ratio 010402 general chemistry 01 natural sciences Signal Noise (electronics) law.invention Nanopores law Flicker noise Instrumentation Fluid Flow and Transfer Processes Coupling Nanotubes business.industry Nanotubes Carbon Nanowires Process Chemistry and Technology Transistor Sense (electronics) Sequence Analysis DNA Models Theoretical 021001 nanoscience & nanotechnology 0104 chemical sciences Nanopore Optoelectronics 0210 nano-technology business |
| Zdroj: | ACS sensors. 3(2) |
| ISSN: | 2379-3694 |
| Popis: | The combination of a nanopore with a local field-effect transistor (FET-nanopore), like a nanoribbon, nanotube, or nanowire, in order to sense single molecules translocating through the pore is promising for DNA sequencing at megahertz bandwidths. Previously, it was experimentally determined that the detection mechanism was due to local potential fluctuations that arise when an analyte enters a nanopore and constricts ion flow through it, rather than the theoretically proposed mechanism of direct charge coupling between the DNA and nanowire. However, there has been little discussion on the experimentally observed detection mechanism and its relation to the operation of real devices. We model the intrinsic signal and noise in such an FET-nanopore device and compare the results to the ionic current signal. The physical dimensions of DNA molecules limit the change in gate voltage on the FET to below 40 mV. We discuss the low-frequency flicker noise (10 kHz), medium-frequency thermal noise (100 kHz), and high-frequency capacitive noise (100 kHz) in FET-nanopore devices. At bandwidths dominated by thermal noise, the signal-to-noise ratio in FET-nanopore devices is lower than in the ionic current signal. At high frequencies, where noise due to parasitic capacitances in the amplifier and chip is the dominant source of noise in ionic current measurements, high-transconductance FET-nanopore devices can outperform ionic current measurements. |
| Databáze: | OpenAIRE |
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