Physical origin of the optical degradation of InAs quantum dot lasers
Autor: | Gaudenzio Meneghesso, Fabio Samparisi, Justin Norman, Robert W. Herrick, Daehwan Jung, Matteo Meneghini, Matteo Buffolo, John E. Bowers, Enrico Zanoni, Carlo De Santi |
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Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
carrier escape
degradation lasers Quantum dots reliability semiconductor defects Materials science 02 engineering and technology Electron law.invention Stress (mechanics) 020210 optoelectronics & photonics law 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Silicon photonics Equivalent series resistance business.industry Slope efficiency Condensed Matter Physics Laser Atomic and Molecular Physics and Optics Quantum dot laser Quantum dot Optoelectronics business |
Popis: | We present an extensive analysis of the physical mechanisms responsible for the degradation of 1.3-μm InAs quantum dot lasers epitaxially grown on Si, for application in silicon photonics. For the first time, we characterize the degradation of the devices by combined electro-optical measurements, electroluminescence spectra, and current-voltage analysis. We demonstrate the following original results: when submitted to a current step-stress experiment: 1) QD lasers show a measurable increase in threshold current, which is correlated to a decrease in slope efficiency; 2) the degradation process is stronger, when devices are stressed at current higher than 200 mA, i.e., in the stress regime, where both ground-state and excited-state emission are present; and 3) in the same range of stress currents, an increase in the defect-related current components is also detected, along with a slight decrease in the series resistance. Based on the experimental evidence collected within this paper, the degradation of QD lasers is ascribed to a recombination-enhanced defect reaction (REDR) process, activated by the escape of electrons out of the quantum dots. |
Databáze: | OpenAIRE |
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