Properties of zirconium silicate thin films prepared by laser ablation
Autor: | M. Filipescu, D.G. Matei, Aldo Ferrari, Marco Balucani, Gheorghe Dinescu, Ovidiu Toma, N.D. Scarisoreanu, C. Ghica, Maria Dinescu, L.C. Nistor |
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Rok vydání: | 2004 |
Předmět: |
Zirconium
Materials science Laser ablation Silicon Scanning electron microscope Mechanical Engineering Analytical chemistry chemistry.chemical_element Condensed Matter Physics Laser Pulsed laser deposition law.invention chemistry Mechanics of Materials law General Materials Science Electrical measurements Thin film |
Zdroj: | Materials Science in Semiconductor Processing. 7:209-214 |
ISSN: | 1369-8001 |
DOI: | 10.1016/j.mssp.2004.09.122 |
Popis: | Thin films of zirconium silicate were obtained by alternative ablation of Zr and Si targets in oxygen reactive atmosphere; in a set of experiments a radiofrequency (RF) discharge beam was added to the pulsed laser deposition (PLD) system. Pt-coated silicon, Sapphire and glass were used as collectors. The third harmonics of the Nd:YAG laser ( λ = 355 nm ) working at 10 Hz and at a laser fluence varying in the range of (4–6 J/cm2) was used. The oxygen pressure varied between 1 and 10 Pa and the substrate holder was kept at room temperature. The RF beam addition influence on the electrical, optical and morphological proprieties of zirconium silicate films was particularly investigated. The obtained films, with thicknesses in the range of 15–60 nm, have been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD) and electrical measurements. Dielectric permittivity values (real part) in the range of 7–13 and low losses (0.008–0.015) were measured for samples prepared with the RF oxygen beam addition. |
Databáze: | OpenAIRE |
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