Performance improvement of circular-grating surface-emitting DBR lasers using an MQW structure with etch-stop layer

Autor:	R. Barber, Margaret Buchanan, J. Stapledon, Mahmoud Fallahi, M. Nournia, M. Dion, Z. R. Wasilewski
Rok vydání:	1995
Předmět:	etch-stop layer Materials science MBE surface-emitting DBR lasers Physics::Optics InGaAs-GaAs Grating law.invention 980 nm Condensed Matter::Materials Science electron beam lithography Optics law Electrical and Electronic Engineering Quantum well circular-grating type business.industry strained triple quantum well Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Laser Distributed Bragg reflector Wavelength Distributed Bragg reflector laser distributed Bragg reflector Optoelectronics 170 mW high efficiency operation business low threshold current MQW structure Layer (electronics) Electron-beam lithography 17 mA
Zdroj:	Electronics Letters. 31:1581-1582
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el:19951045
Popis:	The authors demonstrate low threshold current high efficiency operation of circular-grating surface-emitting distributed Bragg reflector (CG-SE-DBR) lasers. A strained InGaAs-GaAs triple quantum well with an etch-stop layer was grown by MBE. Circular gratings are defined by electron beam lithography. A threshold current as low as 17 mA and a pulsed output power >170 mW at /spl sim/980 nm wavelength are obtained.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e0fd06c8ed6d356cdab55b66a051befe https://doi.org/10.1049/el:19951045 Zobrazit plný text záznamu