Design of high frequency GaPO4 BAW resonators by chemical etching
| Autor: | N. Prud'Homme, V. Flaud, Olivier Cambon, Julien Zaccaro, Alain Ibanez, Philippe Papet |
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| Přispěvatelé: | Institut Charles Gerhardt Montpellier - Institut de Chimie Moléculaire et des Matériaux de Montpellier (ICGM ICMMM), Ecole Nationale Supérieure de Chimie de Montpellier (ENSCM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Université Montpellier 1 (UM1)-Université Montpellier 2 - Sciences et Techniques (UM2)-Institut de Chimie du CNRS (INC), Optique et Matériaux (OPTIMA), Institut Néel (NEEL), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS) |
| Jazyk: | angličtina |
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Analytical chemistry Infrared spectroscopy chemistry.chemical_element Mineralogy 02 engineering and technology Surface finish 01 natural sciences Etching (microfabrication) 0103 physical sciences Materials Chemistry Surface roughness Electrical and Electronic Engineering Reactive-ion etching Gallium Instrumentation ComputingMilieux_MISCELLANEOUS 010302 applied physics Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics Isotropic etching Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] Dislocation 0210 nano-technology |
| Zdroj: | Sensors and Actuators B: Chemical Sensors and Actuators B: Chemical, Elsevier, 2008, pp.270-278. ⟨10.1016/j.snb.2007.11.020⟩ |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2007.11.020⟩ |
| Popis: | GaPO 4 is a piezoelectric quartz homeotype material. For bulk acoustic waves device application, chemical etching is used to obtain very thin piezoelectric membranes. This paper presents a way to design high frequency resonators by chemical etching. Before etching, GaPO 4 samples were characterized by X-ray diffraction topography and infrared absorption spectroscopy to evaluate the dislocation and –OH content, respectively. The chemical etching of gallium orthophosphate in H 3 PO 4 and NH 3 based solvents are compared. The anisotropy of the etching was studied using four different crystalline orientations. For the crystalline orientation used in electronic applications (AT cut), mixed H 3 PO 4 –GaPO 4 solutions are not suitable because they produce major surface defects for etching depths above 40 μm. For the etching of this orientation, basic (NH 3 –K 3 PO 4 ) solutions were preferred as they appear to allow to dissolve, without major defects, depths of up to 250 μm. The measurement of the resulting roughness either with a profilometer or by AFM gives a roughness of 0.02 μm r.m.s. without generating important surface defects. The piezoelectric properties of the etched plates were measured by the air-gap method as a function of the etching depth. No modification of the quality factor Q was observed for depths up to 200 μm. A three-dimensional etching process, involving a mechanical mask, was developed in order to manufacture AT antimesa resonators. Up to now, according to the raw material quality, the highest frequency obtained for the fundamental mode is 26.5 MHz ( QF = 1.1 × 10 12 ) and 16.5 MHz ( QF = 1.6 × 10 11 ) after 88 μm and 150 μm etching depths in H 3 PO 4 + GaPO 4 and NH 3 + K 3 PO 4 solvents, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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