Green coloring of GaN single crystals introduced by Cr impurity
| Autor: | M. Barchuk, Patrick Hofmann, Johannes Heitmann, Christian Röder, G. Gärtner, F. Zimmermann, D. Bastin, Martin Krupinski, H. Sträter, Thomas Mikolajick, F.C. Beyer |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Photoluminescence Crystal impurities Bulk GaN Hydride vapor phase epitaxy Absorption spectroscopy Photoluminescence spectroscopy Doping Biophysics Analytical chemistry 02 engineering and technology General Chemistry 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Biochemistry Atomic and Molecular Physics and Optics 0104 chemical sciences Secondary ion mass spectrometry Absorption band ddc:530 Kristallverunreinigungen Bulk-GaN Hydrid-Gasphasenepitaxie Absorptionsspektroskopie Photolumineszenzspektroskopie Emission spectrum 0210 nano-technology Luminescence Absorption (electromagnetic radiation) Spectroscopy |
| Popis: | In this study unintentionally doped GaN grown by hydride vapor phase epitaxy that exhibits a sharply delimited region of green color was investigated. Optical analysis was performed by absorption and photoluminescence spectroscopy. An absorption band between 1.5 and 2.0 eV was found to be responsible for the green color and was related to a sharp emission at 1.193 eV by luminescence and excitation spectroscopy. The appearance of both optical signatures in the region of green color was related to an increase of Cr contamination detected by secondary ion mass spectrometry. We propose that the origin of green color as well as the emission line at 1.193 eV is attributed to internal transitions of Cr 4 + . |
| Databáze: | OpenAIRE |
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