Surface plasmon effects on carbon nanotube field effect transistors
| Autor: | J. Jussi Toppari, Henrik Kunttu, Tommi Isoniemi, Tommi K. Hakala, Päivi Törmä, Andreas Johansson, Marcus Rinkiö |
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| Přispěvatelé: | University of Jyväskylä, Department of Applied Physics, Aalto-yliopisto, Aalto University |
| Jazyk: | angličtina |
| Rok vydání: | 2011 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) transistori Nanotechnology Carbon nanotube hiilinanoputki plasmonics law.invention law field effect transistors polaritonit Plasmon ta114 carbon nanotubes business.industry hiilinanoputket Surface plasmon Nanofysiikka nanoscience Surface plasmon polariton Carbon nanotube field-effect transistor pintaplasmonit Carbon nanotube quantum dot plasmoni Optoelectronics Field-effect transistor business nanotube devices Localized surface plasmon |
| Popis: | Herein, we experimentally demonstrate surface plasmon polariton (SPP) induced changes in the conductivity of a carbon nanotube field effect transistor (CNT FET). SPP excitation is done via Kretschmann configuration while the measured CNT FET is situated on the opposite side of the metal layer away from the laser, but within reach of the launched SPPs. We observe a shift of 0.4 V in effective gate voltage. SPP-intermediated desorption of physisorbed oxygen from the device is discussed as a likely explanation of the observed effect. This effect is visible even at low SPP intensities and within a near-infrared range. peerReviewed |
| Databáze: | OpenAIRE |
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