Design of a Ka-Band Single-Chip Front-End based on a 100 nm GaN-on-Si technology
| Autor: | Lorenzo Pace, Remy Leblanc, A. Suriani, Sergio Colangeli, Patrick E. Longhi, Ernesto Limiti, Ferdinando Costanzo, Walter Ciccognani |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Power gain
Power-added efficiency High-Power Amplifier (HPA) Materials science business.industry Core Chip 020208 electrical & electronic engineering Settore ING-INF/01 020206 networking & telecommunications Switch 02 engineering and technology Gallium Arsenide (GaAs) Noise figure Chip Single-Chip Front-End (SCFE) Logic gate 0202 electrical engineering electronic engineering information engineering Optoelectronics Low-Noise Amplifier (LNA) Ka band Radio frequency Gallium Nitride (GaN) business Monolithic microwave integrated circuit |
| Zdroj: | 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC). |
| DOI: | 10.1109/inmmic46721.2020.9160306 |
| Popis: | In this paper, a Single-Chip Front-End (SCFE) operating in Ka-Band (35–36.5 GHz) is presented. Chip is designed exploiting a GaN-on-Si technology featured by 100nm gate length provided by OMMIC foundry. This MMIC integrates high-power, low-noise amplification functionalities enabled by a couple of synchronous Single-Pole Double-Throw (SPDT) switches, occupying a total surface of 4.7×3 mm2. Transmit-mode (Tx) performance present a 36 dBm output power, a Power Added Efficiency (PAE) higher than 25% and a 20dB power gain at 2 dB compression. Regarding the receiving-mode (Rx) performance, a sub-3.2 dB Noise Figure (NF) and a linear gain just below the 32 dB level is obtained, with a I/O matching better than 20 dB, as well. |
| Databáze: | OpenAIRE |
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