Electron-hole asymmetry in electrical conductivity of low-fluorinated graphene: Numerical study
| Autor: | Vladimir A. Osipov, Dmitry V. Kolesnikov |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Condensed Matter - Mesoscale and Nanoscale Physics Condensed matter physics Solid-state physics Graphene Scattering media_common.quotation_subject FOS: Physical sciences Electron hole Condensed Matter Physics 01 natural sciences Asymmetry Electron transport chain 010305 fluids & plasmas Electronic Optical and Magnetic Materials law.invention Maxima and minima Electrical resistivity and conductivity law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics media_common |
| DOI: | 10.48550/arxiv.1910.09229 |
| Popis: | By using the real-space Green-Kubo formalism we study numerically the electron transport properties of low-fluorinated graphene. At low temperatures the diffuse transport regime is expected to be prevalent, and we found a pronounced electron-hole asymmetry in electrical conductivity as a result of quasi-resonant scattering on the localized states. For the finite temperatures in the variable-range hopping transport regime the interpretation of numerical results leads to the appearance of local minima and maxima of the resistance near the energies of the localized states. A comparison with the experimental measurements of the resistance in graphene samples with various fluorination degrees is discussed. |
| Databáze: | OpenAIRE |
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