Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films
| Autor: | Jimin Maeng, Felix Deku, Shakil Mohammed, Timothy J. Gardner, Stuart F. Cogan, Vindhya Reddy Danda, Alexandra Joshi-Imre |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Amorphous silicon
Hot Temperature Materials science Vapor Pressure Nitrogen Surface Properties Carbon Compounds Inorganic Molecular Conformation Biomedical Engineering chemistry.chemical_element 02 engineering and technology Dielectric complex mixtures Oxygen Article Carbide Biomaterials 03 medical and health sciences chemistry.chemical_compound 0302 clinical medicine Coated Materials Biocompatible Plasma-enhanced chemical vapor deposition Residual stress Mechanical Phenomena Power density Silicon Compounds Water Membranes Artificial equipment and supplies 021001 nanoscience & nanotechnology Chemical engineering chemistry 0210 nano-technology Oxidation-Reduction 030217 neurology & neurosurgery Water vapor |
| Zdroj: | J Biomed Mater Res B Appl Biomater |
| ISSN: | 1552-4981 1552-4973 |
| DOI: | 10.1002/jbm.b.34258 |
| Popis: | The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a-SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a-SiC:H films. Evidence of amorphous silicon carbide films reacting with oxygen and water vapor in the ambient environment are presented. The effect of deposition parameters on oxidation and stress variation in a-SiC:H film is studied. It is found that the films deposited at low temperature or power are susceptible to oxidation and undergo a notable increase in compressive stress over time. Furthermore, the films deposited at sufficiently high temperature (≥325 C) and power density (≥0.2 W cm-2 ) do not exhibit pronounced oxidation or temporal stress variation. These results serve as the basis for developing amorphous silicon carbide based dielectric encapsulation for implantable medical devices. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 107B: 1654-1661, 2019. |
| Databáze: | OpenAIRE |
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