Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon
| Autor: | Kevin G. Crawford, Khaled Elgaid, Xu Li, Bhavana Benakaprasad, Abdalla Eblabla |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Fabrication Materials science Silicon business.industry Contact resistance chemistry.chemical_element Substrate (electronics) High-electron-mobility transistor 01 natural sciences Electronic Optical and Magnetic Materials chemistry Electrical resistivity and conductivity Etching (microfabrication) 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Ohmic contact |
| ISSN: | 0018-9383 |
| Popis: | In this article, we report the optimization of ohmic contact formation on AlGaN/GaN on low-resistivity silicon. For achieving this, a strategy of uneven AlGaN/GaN was introduced through patterned etching of the substrate under the contact. Various pattern designs (holes, horizontal lines, vertical lines, grid) and varied etch depth (above and below the 2-D electron gas) were investigated. Furthermore, a study of planar and nonplanar ohmic metallization was investigated. Compared to a traditional fabrication strategy, we observed a reduced contact resistance from 0.35 to 0.27 $\Omega \cdot $ mm by employing a grid etching approach with a “below channel” etch depth and nonplanar ohmic metallization. In general, measurements of “below channel” test structures exhibited improved contact resistance compared to “above channel” in both planar and nonplanar ohmic metallization. |
| Databáze: | OpenAIRE |
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