Bulk and surface instabilities in boron doped float-zone samples during light induced degradation treatments
Autor: | Giso Hahn, Axel Herguth, David Sperber, Alexander Graf, Adrian Heilemann |
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Jazyk: | angličtina |
Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Charge carrier lifetime crystalline silicon degradation float-zone (FZ) silicon nitride silicon photovoltaics stability surface passivation Passivation Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound Float zone Silicon nitride chemistry 0103 physical sciences Boron doping Light induced Degradation (geology) ddc:530 Crystalline silicon 0210 nano-technology |
Popis: | Float-zone silicon is often used as a supposedly stable high lifetime reference material. Here it is shown, however, that boron doped float-zone samples that underwent a fast firing step may suffer from a severe degradation in bulk lifetime during illumination at elevated temperatures. Furthermore, it is observed that silicon nitride related passivation may be affected by a long-term decrease in chemical passivation quality. A time and injection resolved visualization is introduced to quickly distinguish between these degradation features. Both bulk lifetime and chemical passivation quality are shown to recover at the same treatment conditions after longer treatment times. |
Databáze: | OpenAIRE |
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