Effects of Polysilane Addition to Chlorobenzene and High Temperature Annealing on CH3NH3PbI3 Perovskite Photovoltaic Devices
| Autor: | Kaede Kitagawa, Satoshi Minami, Masaya Taguchi, Atsushi Suzuki, Yugo Asakawa, Masanobu Okita, Takeo Oku, Sakiko Fukunishi, Tomoharu Tachikawa, Satoshi Yoshida |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Raman scattering
Materials science Annealing (metallurgy) polysilane Ab initio 02 engineering and technology 010402 general chemistry 01 natural sciences chemistry.chemical_compound symbols.namesake Materials Chemistry Molecular orbital perovskite Perovskite (structure) calculation Surfaces and Interfaces stability 021001 nanoscience & nanotechnology Engineering (General). Civil engineering (General) 0104 chemical sciences Surfaces Coatings and Films chemistry Chemical engineering Chlorobenzene CH3NH3PbI3 solar cells symbols chlorobenzene Polysilane TA1-2040 0210 nano-technology Layer (electronics) decaphenylcyclopentasilane |
| Zdroj: | Coatings, Vol 11, Iss 665, p 665 (2021) Coatings Volume 11 Issue 6 |
| ISSN: | 2079-6412 |
| Popis: | CH3NH3PbI3 perovskite photovoltaic devices treated with a polysilane layer were fabricated and characterized. Decaphenylcyclopentasilane (DPPS) in chlorobenzene solution was deposited at the surface of the perovskite layer, and the resulting device was annealed at 140–260 °C. The photoconversion efficiencies of the DPPS-treated device remained high even after 255 days in ambient air. Raman scattering spectroscopy and ab initio molecular orbital calculations of DPPS suggested that it increased hole transport efficiency in the treated devices, which was confirmed from the high shunt resistances of the DPPS-treated devices. |
| Databáze: | OpenAIRE |
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