| Autor: |
Hemanth Kumar Bangolla, Ming-Deng Siao, Yi-Hua Huang, Ruei-San Chen, Agnė Žukauskaitė, Justinas Palisaitis, Per O. Å. Persson, Lars Hultman, Jens Birch, Ching-Lien Hsiao |
| Přispěvatelé: |
Publica |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
Nanoscale advances. 4(22) |
| ISSN: |
2516-0230 |
| Popis: |
Photoconduction (PC) properties were investigated for ternary indium aluminium nitride (InxAl1-xN) nanorods (NRs) with different indium compositions (x) from 0.35 to 0.68, as grown by direct-current reactive magnetron sputter epitaxy. Cross-sectional scanning transmission electron microscopy (STEM) reveals single-crystal quality of the vertically aligned InxAl1-xN NRs. Single-rod photodetector devices with good ohmic contacts were fabricated using the focused-ion-beam technique (FIB), where the In-rich In0.68Al0.32N NR exhibits an optimal photocurrent responsivity of 1400 A W-1 and photoconductive gain of 3300. A transition from a positive photoresponse to a negative photoresponse was observed, while increasing the In composition x from 0.35 to 0.57. The negative PC was further enhanced by increasing x to 0.68. A model based on the coexistence and competition of deep electron trap states and recombination centers was proposed to explain the interesting composition-dependent PC in these ternary III-nitride 1D nanostructures. Funding Agencies|Ministry of Science and Technology. (MOST) of Taiwan [MOST 108-2628-M-011-001-MY3, MOST 109-2622-E-011-034, MOST 110-2622-E-011-017]; Swedish Research Council [2018-04198, 2021-00171, RIF21-0026]; Swedish Energy Agency [46658-1]; STINT Foundation [MG2019-8485]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University [SFO-Mat-LiU 2009-00971]; Knut and Alice Wallenberg Foundation [KAW 2020.0033]; Swedish Foundation for Strategic Research [2021-00171, RIF21-0026] |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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