Optical, Electrical, And Crystal Properties Of Tio2 Thin Films Grown By Atomic Layer Deposition On Silicon And Glass Substrates
Autor: | Hakan Ates, Kagan Topalli, Y. Unal, I. Kupa, Ali Kemal Okyay, S. Ş. Çetin, L. Durna |
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Rok vydání: | 2018 |
Předmět: |
Morphology (linguistics)
Materials science Silicon Solid-state physics chemistry.chemical_element 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Electronic Optical and Magnetic Materials Atomic layer deposition chemistry Chemical engineering Materials Chemistry Crystal properties Electrical and Electronic Engineering Thin film 0210 nano-technology Water vapor Titanium |
Popis: | TiO2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO2/glass and TiO2/Si thin films was carried out, varying the deposition temperature in the range from 100A degrees C to 250A degrees C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO2 films grown by ALD may represent promising materials for future applications in optoelectronic devices. |
Databáze: | OpenAIRE |
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