Low Surface Recombination Velocity using amorphous Silicon on industrial-type cleaned Surfaces
| Autor: | Sebastian Gloger, Nils Brinkmann, Barbara Terheiden |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Amorphous silicon
Aqueous solution Materials science Passivation Silicon Metallurgy Nanocrystalline silicon Analytical chemistry chemistry.chemical_element hydrogenated amorphous silicon industrial cleaning chemistry.chemical_compound Energy(all) chemistry Degradation (geology) Wafer Layer (electronics) |
| Zdroj: | Energy Procedia. 8:666-671 |
| ISSN: | 1876-6102 |
| Popis: | The surface passivation ability of a hydrogenated amorphous silicon (a-Si:H) layer is investigated on industrial-type cleaned p-type (2 Ωcm) FZ and Cz silicon wafers. The cleaning sequence consists of laser/saw damage removal and immersions in aqueous HCl and HF solutions. After this cleaning an effective surface recombination velocity Seff of 1.0 cm/s is achieved with a deposited and annealed a-Si:H-layer. No RCA or similar elaborate cleaning steps are needed to achieve this low surface recombination velocity. After a firing step in a belt furnace at a wafer temperature of up to 670 °C the passivation ability of the a-Si:H layer is fully restored during hydrogen annealing. It is shown that the amount of silicon hydrogen bonds in the a-Si:H layer is correlated to the degradation and recovery of the passivation quality of the a-Si:H layer. |
| Databáze: | OpenAIRE |
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