Radiation‐induced interface phenomena: Decoration of high‐energy density ion tracks
Autor: | Thomas A. Tombrello, C. W. Nieh, P. Anders Ingemarsson, Bo U. R. Sundqvist |
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Rok vydání: | 1989 |
Předmět: | |
Zdroj: | Applied Physics Letters. 54:1513-1515 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.101383 |
Popis: | The effect of 20 MeV Cl4 + ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed. |
Databáze: | OpenAIRE |
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