Radiation‐induced interface phenomena: Decoration of high‐energy density ion tracks

Autor: Thomas A. Tombrello, C. W. Nieh, P. Anders Ingemarsson, Bo U. R. Sundqvist
Rok vydání: 1989
Předmět:
Zdroj: Applied Physics Letters. 54:1513-1515
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.101383
Popis: The effect of 20 MeV Cl4 + ions incident on Au-SiO2 and Ag-SiO2 interfaces was investigated using high-resolution transmission electron microscopy. Cross-sectional micrographs expose beam-induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.
Databáze: OpenAIRE