Effect of the Passivation Layer on the Noise Characteristics of Mid-Wave-Infrared InAs/GaSb Superlattice Photodiodes
| Autor: | Uğur Serincan, Atilla Aydinli, Bulent Arikan, Rasit Turan, Kutlu Kutluer, Omer Salihoglu, Murat Kilinc, Tunay Tansel, B. Aslan, Yüksel Ergün |
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| Přispěvatelé: | Aydınlı, Atilla, Anadolu Üniversitesi, Fen Fakültesi, Fizik Bölümü |
| Rok vydání: | 2012 |
| Předmět: |
Specific detectivity
Materials science Superlattices Passivation Frequency-dependent Noise suppression 1/F noise High quality Peak responsivity Mid-wave-infrared Photodiode Mid-Wave-Infrared Photodiode law.invention chemistry.chemical_compound Responsivity Inas/Gasb Optics law Electrical and Electronic Engineering Infrared radiation Photodiodes Inas/gasb business.industry Cutoff wavelengths Gallium alloys Range Noise Characterization Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode Gallium antimonide chemistry Design structure Passivation layer Optoelectronics Indium arsenide business Molecular beam epitaxy Noise (radio) |
| Zdroj: | IEEE Photonics Technology Letters |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2012.2188504 |
| Popis: | WOS: 000302729800012 The authors describe the noise characterization of a mid-wavelength-infrared (MWIR) photodiode based on indium arsenide and gallium antimonide (InAs/GaSb) superlattice (SL), addressing the influence of different passivation layers applied to the surface of the device. The MWIR InAs/GaSb SL design structure is based on p-i-n configuration grown by the molecular beam epitaxy on a (001) n-GaSb substrate. The SiO2-passivated SL photodiodes demonstrated a Schottky-limited noise up to a bias voltage of -0.1 V where the measured peak responsivity is 1.37 A/W with a cut-off wavelength of 4.9 mu m and the specific detectivity as high as 1.23 x 10(12) cm. Hz(1/2)/W, demonstrating the high quality of the fabricated MWIR SL photodiodes. The noise measurements exhibited a frequency-dependent plateau (i.e., 1/f noise) for unpassivated and Si3N4-passivated samples, whereas 1/f-type noise suppression (i.e., frequency-independent plateau) with a noise current reduction at about 30 Hz of more than one order of magnitude was observed for the SiO2-passivated ones. |
| Databáze: | OpenAIRE |
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