Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering
| Autor: | Haisheng Rong, Mario J. Paniccia, Oded Cohen, Ansheng Liu, Dani Hak |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
Silicon business.industry Photonic integrated circuit Silicon on insulator chemistry.chemical_element Laser pumping Waveguide (optics) Atomic and Molecular Physics and Optics symbols.namesake Optics chemistry Net gain symbols Optoelectronics business Absorption (electromagnetic radiation) Raman scattering |
| Zdroj: | Optics express. 12(18) |
| ISSN: | 1094-4087 |
| Popis: | We observe for the first time net optical gain in a low loss silicon waveguide in silicon-on-insulator (SOI) based on stimulated Raman scattering with a pulsed pump laser at 1.545 microm. We show that pulsed pumping with a pulse width narrower than the carrier recombination lifetime in SOI significantly reduces the free carrier generation rate due to two-photon absorption (TPA) in silicon. For a 4.8 cm long waveguide with an effective core area of ~1.57 microm2, we obtained a net gain of 2 dB with a pump pulse width of ~17 ns and a peak pump power of ~470 mW inside the waveguide. |
| Databáze: | OpenAIRE |
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