Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method
| Autor: | Afishah Alias, Wai Yip Lam, Abu Bakar Abd Rahman, Katsuhiro Uesugi, Muhammad Hafiz Abu Bakar, Mui Li Lam, Khairul Anuar Mohamad |
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| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry Annealing (metallurgy) Physics QC1-999 Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Heterojunction diode chemistry.chemical_compound chemistry Sputtering 0103 physical sciences Polyethylene terephthalate Optoelectronics 0210 nano-technology business Forward current Diode Voltage |
| Zdroj: | EPJ Web of Conferences, Vol 162, p 01061 (2017) |
| Popis: | In this work, p-CuGaO 2 /n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET) substrates. Structural, morphology, optical and electrical properties of CuGaO 2 /ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002) peak were stronger at the range of 34° while CuGaO 2 (015) peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO 2 /ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V. |
| Databáze: | OpenAIRE |
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