Thermoelectric Properties of Indium and Gallium Dually Doped ZnO Thin Films
| Autor: | Truong Huu Nguyen, Nhat Hong Tran Nguyen, Kuei-Hsien Chen, Anh Tuan Thanh Pham, Ngoc Kim Pham, Thang Bach Phan, M. Aminzare, Vinh Cao Tran, Deniz P. Wong, Tosawat Seetawan, Yi-ren Liu, Sunglae Cho, Hanh Kieu Thi Ta |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Dopant business.industry Doping chemistry.chemical_element 02 engineering and technology Conductivity 021001 nanoscience & nanotechnology Thermoelectric materials 01 natural sciences Thermal conductivity chemistry Seebeck coefficient 0103 physical sciences Thermoelectric effect Optoelectronics General Materials Science Gallium 0210 nano-technology business |
| Zdroj: | ACS Applied Materials & Interfaces. 8:33916-33923 |
| ISSN: | 1944-8252 1944-8244 |
| Popis: | We investigated the effect of single and multidopants on the thermoelectrical properties of host ZnO films. Incorporation of the single dopant Ga in the ZnO films improved the conductivity and mobility but lowered the Seebeck coefficient. Dual Ga- and In-doped ZnO thin films show slightly decreased electrical conductivity but improved Seebeck coefficient. The variation of thermoelectric properties is discussed in terms of film crystallinity, which is subject to the dopants' radius. Small amounts of In dopants with a large radius may introduce localized regions in the host film, affecting the thermoelectric properties. Consequently, a 1.5 times increase in power factor, three times reduction in thermal conductivity, and 5-fold enhancement in the figure of merit ZT have been achieved at 110 °C. The results also indicate that the balanced control of both electron and lattice thermal conductivities through dopant selection are necessary to attain low total thermal conductivity. |
| Databáze: | OpenAIRE |
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