Chemical doping of MoS2 multilayer by p-toluene sulfonic acid
| Autor: | Jonghwa Eom, Shaista Andleeb, Arun Kumar Singh |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
Materials science
molybdenum disulfide field-effect transistor p-toluene sulfonic acid doping lcsh:Biotechnology Inorganic chemistry Analytical chemistry chemistry.chemical_element 02 engineering and technology Sulfonic acid 010402 general chemistry 01 natural sciences chemistry.chemical_compound symbols.namesake lcsh:TP248.13-248.65 lcsh:TA401-492 General Materials Science Spectroscopy Molybdenum disulfide chemistry.chemical_classification Doping 021001 nanoscience & nanotechnology 0104 chemical sciences Threshold voltage chemistry Molybdenum Papers symbols lcsh:Materials of engineering and construction. Mechanics of materials Field-effect transistor 0210 nano-technology Raman spectroscopy |
| Zdroj: | Science and Technology of Advanced Materials SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS(16): 3 Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015) |
| ISSN: | 1878-5514 1468-6996 |
| Popis: | We report the tailoring of the electrical properties of mechanically exfoliated multilayer (ML) molybdenum disulfide (MoS2) by chemical doping. Electrical charge transport and Raman spectroscopy measurements revealed that the p-toluene sulfonic acid (PTSA) imposes n-doping in ML MoS2. The shift of threshold voltage for ML MoS2 transistor was analyzed as a function of reaction time. The threshold voltage shifted toward more negative gate voltages with increasing reaction time, which indicates an n-type doping effect. The shift of the Raman peak positions was also analyzed as a function of reaction time. PTSA treatment improved the field-effect mobility by a factor of similar to 4 without degrading the electrical characteristics of MoS2 devices. |
| Databáze: | OpenAIRE |
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