Properties of Seamless W Sub-Micro Electrode Used for Phase Change Memory
| Autor: | Feng Gao-Ming, Feng Song-Lin, Song Zhi-Tang, Liu Bo, Wan Xu-Dong |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
business.industry Chalcogenide General Physics and Astronomy Line (electrical engineering) Phase-change memory chemistry.chemical_compound Reliability (semiconductor) chemistry Hardware_GENERAL Micro electrode Electrode Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical performance business Reset (computing) |
| Zdroj: | Web of Science |
| ISSN: | 1741-3540 0256-307X |
| DOI: | 10.1088/0256-307x/25/6/100 |
| Popis: | In order to improve the reliability of C-RAM devices, a seamless sub-micro W heating electrode in diameter 260 nm is fabricated with standard 0.18 μm CMOS processing line. Then we successfully manufacture a chalcogenide random access memory device using this seamless sub-micro W heating electrode. The results show good electrical performance, e.g. the reset current of 1.3 mA and the set/reset cycle up to 109 have been achieved. |
| Databáze: | OpenAIRE |
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