| Autor: |
Jun'ichi Shimizu, Hitoshi Wakabayashi, Takumi Ohashi, Kuniyuki Kakushima, Atsushi Ogura, Mayato Toyama, Kazuo Tsutsui, Kentaro Matsuura, Iriya Muneta, Seiya Ishihara |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1246-1252 (2018) |
| ISSN: |
2168-6734 |
| Popis: |
We have fabricated large area integrated top-gate ${n}$ MISFETs with sputter-deposited-MoS2 film having n-type operation. A sputtering method enables us to form a large-area MoS2 thin film followed by H2S annealing to compensate sulfur vacancies. Two passivation films of ALD-Al2O3 enhance the process endurance of MoS2 channel. Therefore, we demonstrate TiN-top-gate ${n}$ MISFET, which is a substantial first step to realize industrial chip-level LSIs with MoS2-channel FETs. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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