Electrically-Tunable High Curie Temperature Two-Dimensional Ferromagnetism in Van der Waals Layered Crystals
| Autor: | Jingshan Qi, Xiaofeng Qian, Hua Wang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Condensed Matter - Materials Science Materials science Physics and Astronomy (miscellaneous) Spintronics Condensed matter physics Magnetism Transition temperature Materials Science (cond-mat.mtrl-sci) FOS: Physical sciences 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Magnetization symbols.namesake Magnetic anisotropy Condensed Matter::Materials Science Ferromagnetism 0103 physical sciences symbols Curie temperature Condensed Matter::Strongly Correlated Electrons van der Waals force 0210 nano-technology |
| DOI: | 10.48550/arxiv.1811.02674 |
| Popis: | Identifying intrinsic low-dimensional ferromagnets with high transition temperature and electrically tunable magnetism is crucial for the development of miniaturized spintronics and magnetoelectrics. Recently long-range 2D ferromagnetism was observed in van der Waals crystals CrI$_3$ and Cr$_2$Ge$_2$Te$_6$, however their Curie temperature is significantly lowered when reducing down to monolayer/few layers. Herein, using renormalized spin-wave theory and first-principles electronic structure theory, we present a theoretical study of electrically tunable 2D ferromagnetism in van der Waals layered CrSBr and CrSeBr semiconductors with high Curie temperature of ~150K and sizable band gap. High transition temperature is attributed to strong anion-mediated superexchange interaction and a sizable spin-wave excitation gap due to large exchange and single-ion anisotropy. Remarkably, hole and electron doping can switch magnetization easy axis from in-plane to out-of-plane direction. These unique characteristics establish monolayer CrSBr and CrSeBr as promising platform for realizing 2D spintronics and magnetoelectrics such as 2D spin field effect transistor. Comment: 9 pages, 3 figures. The following article has beenaccepted by Applied Physics Letters. After it is published, it will be found at APL |
| Databáze: | OpenAIRE |
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