Ion Beam Doping of Silicon Nanowires
| Autor: | Simone Pisana, Alan Colli, S. Piscanec, Andrea C. Ferrari, Carsten Ronning, A. Fasoli |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon Ion beam business.industry Phonon Mechanical Engineering Doping Nanowire chemistry.chemical_element Bioengineering General Chemistry Condensed Matter Physics Crystallography symbols.namesake Hysteresis chemistry symbols Optoelectronics General Materials Science Field-effect transistor business Raman spectroscopy |
| Zdroj: | Nano Letters. 8:2188-2193 |
| ISSN: | 1530-6992 1530-6984 |
| DOI: | 10.1021/nl080610d |
| Popis: | We demonstrate n- and p-type field-effect transistors based on Si nanowires (SiNWs) implanted with P and B at fluences as high as 10(15) cm (-2). Contrary to what would happen in bulk Si for similar fluences, in SiNWs this only induces a limited amount of amorphization and structural disorder, as shown by electrical transport and Raman measurements. We demonstrate that a fully crystalline structure can be recovered by thermal annealing at 800 degrees C. For not-annealed, as-implanted NWs, we correlate the onset of amorphization with an increase of phonon confinement in the NW core. This is ion-dependent and detectable for P-implantation only. Hysteresis is observed following both P and B implantation. |
| Databáze: | OpenAIRE |
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