Insights into semiconductor nanowire conductivity using electrodeposition
| Autor: | O. Salehzadeh, C Liu, Philip J. Poole, Simon P. Watkins, Karen L. Kavanagh |
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| Jazyk: | angličtina |
| Rok vydání: | 2012 |
| Předmět: |
Materials science
Nucleation Nanowire chemistry.chemical_element Gallium arsenide chemistry.chemical_compound Electrodeposition InAs Materials Chemistry Electrical and Electronic Engineering Semiconducting gallium Metal growth Indium arsenide Depletion layer Core-shell Nucleation and growth Catalysts business.industry Gold catalysts Nanowires Contact resistance Metallurgy Electrical contacts GaAs Semiconductor nanowire Condensed Matter Physics Electronic Optical and Magnetic Materials Surface coating chemistry P-type GaAs Optoelectronics Gold business Indium |
| DOI: | 10.1088/0268-1242/27/10/105020 |
| Popis: | Copper (Cu) and iron (Fe) electrical contacts to gallium arsenide (GaAs) and indium arsenide (InAs) nanowires (NWs) have been fabricated via electrodeposition. For undoped or low carbon-doped (10 17/cm 3), p-type GaAs NWs, Cu or Fe nucleate and grow only on the gold catalyst at the NW tip, avoiding the sidewalls. Metal growth is limited by the Au contact resistance due to thick sidewall depletion layers. For InAs NWs and heavier-doped, core-shell (undoped core-C-doped shell) GaAs NWs, metal nucleation and growth occurs on the sidewalls as well as on the gold catalyst limited now by the ion electrolyte diffusivity. © 2012 IOP Publishing Ltd. |
| Databáze: | OpenAIRE |
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