Novel characterisation of dopant-based qubits
| Autor: | Rajib Rahman, Benoit Voisin, Joe Salfi, Sven Rogge |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
Silicon
chemistry.chemical_element FOS: Physical sciences 01 natural sciences law.invention 03 medical and health sciences Quantum state law 0103 physical sciences Mesoscale and Nanoscale Physics (cond-mat.mes-hall) General Materials Science Physical and Theoretical Chemistry 010306 general physics Quantum information science 030304 developmental biology Physics 0303 health sciences Dopant Condensed Matter - Mesoscale and Nanoscale Physics business.industry Condensed Matter Physics Quantum technology chemistry Qubit Optoelectronics Scanning tunneling microscope business Coherence (physics) |
| Popis: | Silicon is a leading qubit platform thanks to the exceptional coherence times that can be achieved and to the available commercial manufacturing platform for integration. Building scalable quantum processing architectures relies on accurate quantum state manipulation, which can only be achieved through a complete understanding of the underlying quantum state properties. This article reviews the electrical methods that have been developed to probe the quantum states encoded in individual and interacting atom qubits in silicon, from the pioneering single electron tunneling spectroscopy framework in nanoscale transistors, to radio frequency reflectometry to probe coherence properties and scanning tunneling microscopy to directly image the wave function at the atomic scale. Together with the development of atomistic simulations of realistic devices, these methods are today applied to other emerging dopant and optically addressable defect states to accelerate the engineering of quantum technologies in silicon. An edited version of this manuscript will appear in MRS Bulletin |
| Databáze: | OpenAIRE |
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