Autor: |
Kaori Matsumoto, Hikaru Sebe, Daisuke Kanemoto, Ryo Matsuzuka, Tetsuya Hirose, Osamu Maida |
Rok vydání: |
2020 |
Předmět: |
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Zdroj: |
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials. |
DOI: |
10.7567/ssdm.2020.a-7-02 |
Popis: |
This paper presents a self-bias NAND (SBNAND) gate and its application to a non-overlapping (NOL) clock generator for extremely low-voltage CMOS LSIs. The SBNAND, consisting of a main NAND gate and feedback inverter, improves the output performance at extremely low supply voltage V DD by controlling the body-bias voltages V BS of the main NAND gate. Measurements of a proof-of-concept chip demonstrated that our proposed NOL clock generator using SBNANDs can operate at the extremely low V DD of 60 mV. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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