A Self-Bias NAND Gate and its Application to Non-Overlapping Clock Generator for Extremely Low-Voltage CMOS LSIs

Autor: Kaori Matsumoto, Hikaru Sebe, Daisuke Kanemoto, Ryo Matsuzuka, Tetsuya Hirose, Osamu Maida
Rok vydání: 2020
Předmět:
Zdroj: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2020.a-7-02
Popis: This paper presents a self-bias NAND (SBNAND) gate and its application to a non-overlapping (NOL) clock generator for extremely low-voltage CMOS LSIs. The SBNAND, consisting of a main NAND gate and feedback inverter, improves the output performance at extremely low supply voltage V DD by controlling the body-bias voltages V BS of the main NAND gate. Measurements of a proof-of-concept chip demonstrated that our proposed NOL clock generator using SBNANDs can operate at the extremely low V DD of 60 mV.
Databáze: OpenAIRE