Cathodoluminescence Characterization of Semiconductor Doping at the Nanoscale
| Autor: | Aristide Lemaître, Stéphane Collin, C. Himwas, Pierre Rale, Andrea Scaccabarozzi, Hung-Ling Chen, Fabrice Oehler, Andrea Cattoni, Jean-Christophe Harmand, Maria Tchernycheva, Romaric De Lépinau |
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| Přispěvatelé: | Centre de Nanosciences et Nanotechnologies (C2N (UMR_9001)), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Université Paris-Sud - Paris 11 (UP11)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS), Institut de Recherche et Développement sur l'Energie Photovoltaïque (IRDEP), Ecole Nationale Supérieure de Chimie de Paris- Chimie ParisTech-PSL (ENSCP)-Centre National de la Recherche Scientifique (CNRS)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Institut Nanosciences et Cryogénie (INAC), Université Grenoble Alpes (UGA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Laboratoire de Biotechnologie de l'Environnement [Narbonne] (LBE), Institut national d’études supérieures agronomiques de Montpellier (Montpellier SupAgro)-Institut National de la Recherche Agronomique (INRA) |
| Jazyk: | angličtina |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Band gap Nanowire Physics::Optics Cathodoluminescence 02 engineering and technology 7. Clean energy 01 natural sciences Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake [SPI]Engineering Sciences [physics] 0103 physical sciences [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat] [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS 010302 applied physics [PHYS]Physics [physics] business.industry Fermi level Doping Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Blueshift Semiconductor chemistry symbols [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics 0210 nano-technology business |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Jun 2018, Waikoloa Village, United States. pp.1697-1701, ⟨10.1109/pvsc.2018.8548260⟩ |
| Popis: | Semiconductor nanostructures open new perspectives for light trapping, lattice-mismatched crystal growth (III-V on Si for instance) and novel transport phenomenon for next generation photovoltaics. The characterization of material properties at the nanoscale remains challenging. In particular, doping is a key parameter in the design and fabrication of solar cells. Here, we show that cathodoluminescence mapping can be used to determine both n-type and p-type doping levels of GaAs with nanometer resolution. n-type semiconductor shows characteristic blueshift emission from the electron filling, while ptype semiconductor exhibits redshift emission due to dominant bandgap narrowing at high concentrations. The generalized Planck’s law is used to fit the whole spectra and extract electron Fermi levels (n-type) and effective bandgap (p-type). Quantitative doping assessment is achieved by systematic spectral analysis, and is demonstrated on planar GaAs layers, and on single GaAs nanowires. This method can be extended to other semiconductors and nanostructures. |
| Databáze: | OpenAIRE |
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