Quantum Conductors Formation and Resistive Switching Memory Effects in Zirconia Nanotubes
| Autor: | I. A. Petrenyov, Alexander Vokhmintsev, Ilya Weinstein, R. V. Kamalov |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
MEMORY EFFECTS
Materials science NANOTUBES HIGH RESISTANCE GOLD COMPOUNDS FOS: Physical sciences Bioengineering Memristor Conductivity law.invention DIGITAL STORAGE CONDUCTIVE FILAMENTS law Electric field MEMRISTOR RESISTANCE RATIO General Materials Science QUANTUM CONDUCTIVE FILAMENT Electrical and Electronic Engineering Ohmic contact Electrical conductor Condensed Matter - Materials Science Resistive touchscreen LOW RESISTANCE RESISTIVE SWITCHING MEMORY business.industry MEMRISTORS ZIRCONIA Mechanical Engineering Conductance Materials Science (cond-mat.mtrl-sci) General Chemistry ELECTRIC FIELDS Anode Mechanics of Materials OXYGEN VACANCIES Optoelectronics RESISTANCE STATE ZRO2 QUANTUM THEORY ZIRCONIA NANOTUBES business QUANTUM CONDUCTIVE FILAMENTS |
| Zdroj: | Nanotechnology |
| DOI: | 10.48550/arxiv.2102.03764 |
| Popis: | The development prospects of memristive elements for non-volatile memory with use of the metal-dielectric-metal sandwich structures with a thin oxide layer are due to the possibility of reliable forming the sustained functional states with quantized resistance. In the paper we study the properties of fabricated memristors based on the non-stoichiometric $ZrO_2$ nanotubes in different resistive switching modes. Anodic oxidation of the $Zr$ foil has been used to synthesize a zirconia layer of $1.7$ $\mu$$m$ thickness, consisting of an ordered array of vertically oriented nanotubes with outer diameter of 75 nm. $Zr/ZrO_2/Au$ sandwich structures have been fabricated by mask magnetron deposition. The effects of resistive switching in the $Zr/ZrO_2/Au$ memristors in unipolar and bipolar modes have been investigated. The resistance ratios $\geq3\cdot10^4$ between high-resistance (HRS) and low-resistance (LRS) states have been evaluated. It has been founded the conductivity of LRS is quantized in a wide range with minimum value of $0.5G_0=38.74$ $\mu$$S$ due to the formation of quantum conductors based on oxygen vacancies ($V_O$). Resistive switching mechanisms of $Zr/ZrO_2/Au$ memristors with allowing for migration of $V_O$ in an applied electric field have been proposed. It has been shown that the ohmic type and space charge limited conductivities are realized in the LRS and HRS, correspondingly. We present the results which can be used for development of effective memristors based on functional $Zr/ZrO_2/Au$ nanolayered structure with multiple resistive states and high resistance ratio. Comment: 24 pages, 8 figures, 1 table, 78 references |
| Databáze: | OpenAIRE |
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