Investigation of glow-discharge-induced morphology modifications on silicon wafers and chromium conversion coatings by AFM and rugosimetry

Autor: Hervé Martinez, Julien Malherbe, Beatriz Fernández, Olivier F. X. Donard
Přispěvatelé: Institut des sciences analytiques et de physico-chimie pour l'environnement et les materiaux (IPREM), Université de Pau et des Pays de l'Adour (UPPA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Chimie Analytique Bio-Inorganique et Environnement (LCABIE), Université de Pau et des Pays de l'Adour (UPPA)-Centre National de la Recherche Scientifique (CNRS)
Rok vydání: 2009
Předmět:
Semiconducting silicon compounds
In-depth profile
Rugosimetry
Analytical chemistry
02 engineering and technology
Surface finish
01 natural sciences
Biochemistry
Analytical Chemistry
Glow discharges
Semiconductor materials
Atomic force microscopy
morphology
Surface roughness
Radio frequencies
Interface/surface analysis
Experimental conditions
Photoresists
Glow discharge
Chromate conversion coating
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Surfaces
Chromate conversion coatings
Conversion coating
In-depth profile analysis
Surface-roughening
chromium
Operating parameters
Sample matrix
AFM
0210 nano-technology
Atoms
Materials science
chemistry.chemical_element
Chromate coatings
Discharge pressures
Silicon wafers
Chromium
Sputtering
Chromates
[CHIM]Chemical Sciences
Wafer
Sample surface
Si wafer
Rf-power
Spectrometry
010401 analytical chemistry
Original sample
Codes (symbols)
0104 chemical sciences
Sputtering time
chemistry
Plasmas
Conversion coatings
Glow discharge spectrometry
RF-GD-OES
Surface morphology
Glow discharge spectrometries
Zdroj: Analytical and Bioanalytical Chemistry
Analytical and Bioanalytical Chemistry, Springer Verlag, 2010, 396 (8), pp.2841--2853. ⟨10.1007/s00216-009-3359-7⟩
ISSN: 1618-2650
1618-2642
DOI: 10.1007/s00216-009-3359-7
Popis: International audience; The effect of radiofrequency glow-discharge sputtering on the sample surface in terms of modifications in the surface morphology were investigated in this work by using atomic force microscopy (AFM) and rugosimetry measurements. The influence of GD operating parameters (e.g. rf power, discharge pressure and sputtering time) on surface roughening was investigated using two different types of samples: mirror-polished and homogeneous silicon wafers and chromate conversion coatings (CCCs). Surface morphology changes produced by GD sputtering into the sample surface were carefully investigated by AFM and rugosimetry, both at the original sample surface and at the bottom of GD craters using different GD experimental conditions, such as the sputtering time (from 1 s to 20 min), rf forward power (20-60 W for the Si wafer and 10-60 W for the CCC), and discharge pressure (400-1,000 Pa for the Si wafer and 500-1000 Pa for the CCC). In the present study, GD-induced morphology modifications were observed after rf-GD-OES analysis, both for the silicon wafers and the CCC. Additionally, the changes observed in surface roughness after GD sputtering were found to be sample-dependent, changing the proportion, shape and roughness of the micro-sized patterns and holes with the sample matrix and the GD conditions. © 2009 Springer-Verlag.
Databáze: OpenAIRE
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