Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells
| Autor: | Boumediene Benyoucef, Sidi Ould Saad Hamady, Michel Aillerie, Meriem Chadel, Mohammed Moustafa Bouzaki |
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| Přispěvatelé: | Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Unité de Recherche Matériaux et Energies Renouvelables (URMER), Université Aboubekr Belkaid - University of Belkaïd Abou Bekr [Tlemcen], IMPACT N4S, ANR-15-IDEX-0004,LUE,Isite LUE(2015) |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Polymers and Plastics Analytical chemistry 02 engineering and technology 7. Clean energy 01 natural sciences law.invention Biomaterials Optics law 0103 physical sciences Solar cell ComputingMilieux_MISCELLANEOUS Transparent conducting film Common emitter 010302 applied physics [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] Dopant business.industry Doping Photovoltaic system [SPI.NRJ]Engineering Sciences [physics]/Electric power Metals and Alloys Heterojunction 021001 nanoscience & nanotechnology 6. Clean water Surfaces Coatings and Films Electronic Optical and Magnetic Materials [SPI.TRON]Engineering Sciences [physics]/Electronics [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic 0210 nano-technology business Layer (electronics) |
| Zdroj: | Materials Research Express Materials Research Express, IOP Publishing Ltd, 2016, 3 (10), pp.105502. ⟨10.1088/2053-1591/3/10/105502⟩ |
| ISSN: | 2053-1591 |
| Popis: | We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 ?m which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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