Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

Autor:	Marc Heyns, Xiao Sun, Samuel C. Bayer, Davide Tierno, Seth King, Paul Wittendorp, Matthijn Dekkers, Christoph Adelmann, Iuliana Radu, Sven Van Elshocht
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Permittivity Technology Materials science Acoustics and Ultrasonics Analytical chemistry chemistry.chemical_element 02 engineering and technology Dielectric Zinc Capacitors 01 natural sciences law.invention Engineering PIEZOELECTRIC PROPERTIES DOMAIN-WALLS law 0103 physical sciences piezoelectric materials LEAD-ZIRCONATE-TITANATE Electrical and Electronic Engineering Thin film Instrumentation 010302 applied physics HIGH-FREQUENCY FERROELECTRICS Science & Technology Relaxation (NMR) Engineering Electrical & Electronic Acoustics 021001 nanoscience & nanotechnology permittivity DIELECTRIC-CONSTANT Capacitor chemistry CERAMICS Electrode ferroelectric films 0210 nano-technology Microwave
Popis:	The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films. ispartof: IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL vol:65 issue:5 pages:881-888 ispartof: location:United States status: published
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd0355e1df238c2ee44b392753b8b27d https://lirias.kuleuven.be/handle/123456789/625110 Zobrazit plný text záznamu