Electrical and Schottky contact properties of Pt/n-Si1-XGe/n-Si(100) heterostructure
| Autor: | Yuksel Bektore, K. Erturk, M. Cuneyt Haciismailoglu |
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| Přispěvatelé: | Uludağ Üniversitesi/Fen-Edebiyat Fakültesi/Fizik Bölümü., Ertürk, Kadir, Bektöre, Yüksel, Hacıismailoğlu, Muhammed Cüneyt, K-7950-2012 |
| Jazyk: | angličtina |
| Rok vydání: | 2005 |
| Předmět: |
Materials science
Silicon Electric properties Silicon molecular beam epitaxy (Si-MBE) Schottky barrier Analytical chemistry chemistry.chemical_element Capacitance Engineering electrical & electronic Thermal effects Schottky barrier heights Engineering Silicon compounds Wafer Physics condensed matter Inert gas SI/SIGE Strain relaxation business.industry Physics Relaxation (NMR) Heterojunction Optics Schottky contact properties Materials science multidisciplinary Pt deposition Current voltage characteristics chemistry Optoelectronics business Layers Molecular beam epitaxy Capacitance-voltage (C-V) measurements Sige Dislocations (Crystals) Heterostructures |
| Popis: | Bu çalışma, 01-04 Haziran 2005 tarihleri arasında Montpellier’de düzenlenen 7. International Workshop on Expert Evaluation and Control of Compound Semiconductor Materials and Technologies’de bildiri olarak sunulmuştur. We report on n-type (100) oriented Si0.76Ge0.24 samples grown by silicon molecular beam epitaxy (Si-MBE). The grown wafer was, first, cut into small pieces. Some of these pieces were annealed under an inert gas atmosphere at 600 degrees C, 700 degrees C and 800 degrees C for 1 h to induce partial relaxation in Si1-xGex. The formation of Schottky junction was made by Pt deposition on n-Si0.76Ge0.24. The electrical properties of, both, the unannealed and annealed Pt/n-Si0.76Ge0.24/n-Si were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. These measurements have been done under different temperatures, and Schottky barrier heights have been determined. Also, these results have been compared with Pt / n-Si. |
| Databáze: | OpenAIRE |
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