Calculating the band structure of 3C-SiC using sp3d5s* + ∆ model
| Autor: | Murat Onen, Marco Turchetti |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
SiC
Physics Coupling Work (thermodynamics) Physics and Astronomy (miscellaneous) business.industry Structure (category theory) FOS: Physical sciences Applied Physics (physics.app-ph) Semiempirical tight-binding Electronic band structure lcsh:QC1-999 Symmetry (physics) Computational physics Condensed Matter::Materials Science Semiconductor Atomic orbital Band diagram business lcsh:Physics |
| Zdroj: | Journal of Theoretical and Applied Physics, Vol 13, Iss 1, Pp 1-6 (2019) |
| ISSN: | 2251-7235 2251-7227 |
| Popis: | We report on a semiempirical tight-binding model for 3C-SiC including the effect of sp 3 d 5 s* orbitals and spin–orbit coupling (∆). In this work, we illustrate in detail the method to develop such a model for semiconductors with zincblende structure, based on Slater–Koster integrals, and we explain the optimization method used to fit the experimental results with such a model. This method shows high accuracy for the evaluation of 3C-SiC band diagram in terms of both the experimental energy levels at high symmetry points and the effective masses. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink