In situ functionalization of graphene
| Autor: | Caterina Cocchi, Ana M. Valencia, Stephanie Reich, Sviatoslav Kovalchuk, Philipp Rietsch, Jan N. Kirchhof, Sebastian Heeg, Siegfried Eigler, Kyrylo Greben, Kirill I. Bolotin |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
In situ
Materials science chemistry.chemical_element FOS: Physical sciences 02 engineering and technology 010402 general chemistry 01 natural sciences Molecular physics law.invention symbols.namesake law Mesoscale and Nanoscale Physics (cond-mat.mes-hall) Molecule General Materials Science ddc:530 Raman plasma Chemical activity Condensed Matter - Materials Science Argon Condensed Matter - Mesoscale and Nanoscale Physics 500 Naturwissenschaften und Mathematik::530 Physik::539 Moderne Physik Graphene Mechanical Engineering graphene Materials Science (cond-mat.mtrl-sci) General Chemistry Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics 530 Physik 0104 chemical sciences chemistry Mechanics of Materials symbols Surface modification functionalization hydrogenation 0210 nano-technology Raman spectroscopy |
| Popis: | While the basal plane of graphene is inert, defects in it are centers of chemical activity. An attractive application of such defects is towards controlled functionalization of graphene with foreign molecules. However, the interaction of the defects with reactive environment, such as ambient, decreases the efficiency of functionalization and makes it poorly controlled. Here, we report a novel approach to generate, monitor with time resolution, and functionalize the defects $\textit{in situ}$ without ever exposing them to the ambient. The defects are generated by an energetic Argon plasma and their properties are monitored using $\textit{in situ}$ Raman spectroscopy. We find that these defects are functional, very reactive, and strongly change their density from $\approx 1\cdot10^{13} cm^{-2}$ to $\approx 5\cdot10^{11} cm^{-2}$ upon exposure to air. We perform the proof of principle $\textit{in situ}$ functionalization by generating defects using the Argon plasma and functionalizing them $\textit{in situ}$ using Ammonia functional. The functionalization induces the n-doping with a carrier density up to $5\cdot10^{12} cm^{-2}$ in graphene and remains stable in ambient conditions. Comment: 12 pages, 4 figures, including Supplementary Information with 6 pages, 6 figures and 1 table |
| Databáze: | OpenAIRE |
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