Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates

Autor:	M. Moser, M. Pradhan, M. Alomari, B. Schoch, K. Sharma, I. Kallfass, A. Garcia-Luque, T. M. Martin-Guerrero, J. N. Burghartz
Rok vydání:	2022
Předmět:	Aluminio Aluminium Gallium Nitride (AlGaN) High Resistivity Silicon (HR-Si) Silicio High-Electron Mobility Transistor (HEMT) Indium Aluminium Nitride (InAlN)
Zdroj:	RIUMA. Repositorio Institucional de la Universidad de Málaga instname
Popis:	A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias S-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit are drawn out in order to initially evaluate this promising technology. This work is supported by the I Plan Propio de la Univ. de Málaga (PhD Grant-401), and the European Microwave Association™ by the EuMA Internship Award 2021 edition. Universidad de Málaga. Campus de Excelencia Internacional Andalucía Tech.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dce4e7ecc35b96cecffe738f3254c05b https://hdl.handle.net/10630/25159 Zobrazit plný text záznamu