Comparison of Characterization Techniques for Measurements of Doping Concentrations in Compensated n-type Silicon
| Autor: | F. Ducroquet, Sébastien Dubois, Jordi Veirman, Benoit Martel, Anne Kaminski-Cachopo, Aurélie Fauveau |
|---|---|
| Přispěvatelé: | Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC ), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), ANR-10-IEED-0003,INES2,INES2(2010) |
| Rok vydání: | 2016 |
| Předmět: |
metallurgic
Materials science Glow Discharge Mass Spectrometry Silicon purification Analytical chemistry chemistry.chemical_element 02 engineering and technology recycling Mass spectrometry 7. Clean energy 01 natural sciences Energy(all) 0103 physical sciences Compensated ICP-MS characterization Ingot [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Inductively coupled plasma mass spectrometry ComputingMilieux_MISCELLANEOUS 010302 applied physics Dopant Doping Hall effect silicon 021001 nanoscience & nanotechnology co-doping Secondary ion mass spectrometry solar grade chemistry 0210 nano-technology SIMS GDMS |
| Zdroj: | 6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop 6th International Conference on Crystalline Silicon Photovoltaics-nPV workshop, Mar 2016, Chambéry, France Energy Procedia Energy Procedia, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩ Energy Procedia, Elsevier, 2016, 92, pp.691-696. ⟨10.1016/j.egypro.2016.07.045⟩ |
| ISSN: | 1876-6102 |
| DOI: | 10.1016/j.egypro.2016.07.045 |
| Popis: | International audience; Nowadays, compensated silicon (Si) is used in photovoltaic (PV) processes, whether it is through intentional co-doping of resistivity-adjusted Czochralski ingots for high efficiency n-type Si solar cells, as a result of alternative Si purification processes for the production of low-cost Si feedstock, or as a result of recycling end-of-life materials. Whatever the origin of the compensated Si, the doping concentrations need to be accurately and quickly characterized in order to control such processes. In this work, a rapid and highly sensitive characterization technique based on low temperature Hall Effect measurements is described in scientific details and compared to three well-established chemical methods: Glow Discharge Mass Spectrometry (GDMS), Inductively-Coupled Plasma Mass Spectrometry (ICP-MS), and Secondary Ion Mass Spectrometry (SIMS). The characterized samples were extracted from the n-type top part of a casted solar grade Si ingot. A very good agreement is observed between the dopants densities extracted from the electrical method and from the standard methods. With the advantage of a very low detection limit combined with a short measurement time, the advanced Hall Effect technique is promising for the rapid and accurate characterization of dopant concentrations in compensated Si. |
| Databáze: | OpenAIRE |
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