Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area
| Autor: | Tae Hyung Park, Jung Ho Yoon, Hye-Jin Kim, Young Jae Kwon, Xing Long Shao, Seul Ji Song, Yumin Kim, Dae Eun Kwon, Cheol Seong Hwang, Kyung Jean Yoon, Sijung Yoo |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Fabrication business.industry Process (computing) chemistry.chemical_element Nanotechnology 02 engineering and technology Type (model theory) 021001 nanoscience & nanotechnology 01 natural sciences Vertical integration Resistive random-access memory chemistry Memory cell 0103 physical sciences Optoelectronics General Materials Science 0210 nano-technology business Tin Scaling |
| Zdroj: | ACS applied materialsinterfaces. 8(28) |
| ISSN: | 1944-8252 |
| Popis: | To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm(2) cell area. In this work, a Pt/Ta2O5/HfO2-x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm(2) on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism. |
| Databáze: | OpenAIRE |
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