2E1 Ar17+ decay and conventional radioactive sources to determine efficiency of semiconductor detectors

Autor: Christophe Prigent, J.P. Rozet, Benjamin Eberhardt, Dominique Vernhet, Emily Lamour
Přispěvatelé: Institut des Nanosciences de Paris (INSP), Université Pierre et Marie Curie - Paris 6 (UPMC)-Centre National de la Recherche Scientifique (CNRS), ANR 06 BLAN 0233,ANR 06 BLAN 0233, ANR-06-BLAN-0233,BIOCRISTAL,Biochemically driven Ca carbonate crystallization in corals, mollusks and eggshells(2006)
Jazyk: angličtina
Rok vydání: 2009
Předmět:
Zdroj: Review of Scientific Instruments
Review of Scientific Instruments, American Institute of Physics, 2009, 80 (2), pp.023103. ⟨10.1063/1.3077284⟩
Review of Scientific Instruments, 2009, 80 (2), pp.023103. ⟨10.1063/1.3077284⟩
ISSN: 0034-6748
1089-7623
DOI: 10.1063/1.3077284⟩
Popis: International audience; Although reliable models may predict the detection efficiency of semiconductor detectors, measurements are needed to check the parameters supplied by the manufacturers namely the thicknesses of dead layer, beryllium window and crystal active area. The efficiency of three silicon detectors has been precisely investigated in their entire photon energy range of detection. In the 0 to a few keV range, we have developed a new method based on the detection of the 2E1 decay of the metastable Ar17+ 2s -> 1s transition. Very good theoretical knowledge of the energetic distribution of the 2E1 decay mode enables precise characterization of the absorbing layers in front of the detectors. In the high-energy range (> 10 keV), the detector crystal thickness plays a major role in the detection efficiency and has been determined using a 241Am source.
Databáze: OpenAIRE