Demonstration of Unified Memory in FinFETs
| Autor: | Maryline Bawedin, Sorin Cristoloveanu, Jong-Hyun Lee, Sungjae Chang, Jung-Hee Lee |
|---|---|
| Přispěvatelé: | Department of Electrical Engineering [Yale University], Yale University [New Haven], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Kyungpook National University [Daegu], Ed. by S. Cristoloveanu and M.S. Shur, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2014 |
| Předmět: |
FinFETs
Materials science multi-bit memory flash Silicon chemistry.chemical_element Silicon on insulator Insulator (electricity) 02 engineering and technology Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences law.invention law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS IT-DRAM Electrical and Electronic Engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ComputingMilieux_MISCELLANEOUS SOI 010302 applied physics Coupling Hardware_MEMORYSTRUCTURES Sense amplifier business.industry Unified memory Transistor Electrical engineering 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials Non-volatile memory Impact ionization chemistry Terminal (electronics) Hardware and Architecture Optoelectronics 0210 nano-technology business Volatile memory |
| Zdroj: | Frontiers in Electronics Ed. by S. Cristoloveanu and M.S. Shur. Frontiers in Electronics, 55, World Scientific, pp.75-94, 2014, Selected Topics in Electronics and Systems, 978-981-4651-76-9 International Journal of High Speed Electronics and Systems International Journal of High Speed Electronics and Systems, World Scientific Publishing, 2014, 23 (03-04), pp.1450019. ⟨10.1142/S0129156414500190⟩ |
| ISSN: | 0129-1564 |
| Popis: | Floating-body-induced transient mechanism in advanced FinFETs was investigated for unified and multi-bit memory capability. Nonvolatile memory operation was achieved by modifying the SOI buried insulator (BOX) such as the SiO 2- Si 3 N 4- SiO 2 (ONO) BOX can accumulate permanent charges. Charges are injected/removed in the Si 3 N 4 layer by back-gate or drain bias and sensed remotely, by gate coupling, through the modulation of the drain current flowing at the front interface. On the other hand, the isolated silicon body of the transistor can store volatile charges, generated by impact ionization and able to modulate the drain current flowing at the back interface. Our experimental results successfully demonstrate that these two different memory modes can be advantageously combined for multi-bit volatile memory operation. The volatile memory behavior strongly depends on the distribution of the nonvolatile charges stored in the nitride buried layer. Our measurements manifest that the nonvolatile charges located near the drain terminal have larger influence on the volatile memory operation than the charges located at the opposite terminal. Also, we reveal that the bias conditions and device geometry are important factors for the two memory modes. |
| Databáze: | OpenAIRE |
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