Influence of Annealing Temperature on Weak-Cavity Top-Emission Red Quantum Dot Light Emitting Diode
| Autor: | Ya Pei Kuo, Chun Yu Lee, Peng Yu Chen, Hsieh Hsing Lu, Ming-Yi Lin |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Annealing (metallurgy) General Chemical Engineering 02 engineering and technology Electron 010402 general chemistry 01 natural sciences Capacitance Article law.invention lcsh:Chemistry Condensed Matter::Materials Science law QLEDs General Materials Science Charge injection business.industry Doping 021001 nanoscience & nanotechnology 0104 chemical sciences top-emission lcsh:QD1-999 Quantum dot microcavity Optoelectronics Quantum efficiency 0210 nano-technology business Light-emitting diode |
| Zdroj: | Nanomaterials Volume 9 Issue 11 Nanomaterials, Vol 9, Iss 11, p 1639 (2019) |
| ISSN: | 2079-4991 |
| DOI: | 10.3390/nano9111639 |
| Popis: | In this report, we show that the annealing temperature in QDs/Mg-doped ZnO film plays a very important role in determining QLEDs performance. Measurements of capacitance and single carrier device reveal that the change of the device efficiency with different annealing temperatures is related to the balance of both electron and hole injection. A comparison of annealing temperatures shows that the best performance is demonstrated with 150 ° C-annealing temperature. With the improved charge injection and charge balance, a maximum current efficiency of 24.81 cd/A and external quantum efficiency (EQE) of 20.09% are achievable in our red top-emission QLEDs with weak microcavity structure. |
| Databáze: | OpenAIRE |
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