Electrophysical characteristics of GaAs1–хPх LEDs irradiated by 2 МeV electrons
| Autor: | V.P. Tartachnyk, Ya. M. Olikh, P.G. Litovchenko, O.V. Konoreva, Yu.V. Pavlovskyy, O.I. Kyrylenko, P. Potera, R.M. Vernydub |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
business.industry electron irradiation led Electron Atomic and Molecular Physics and Optics lcsh:QC1-999 Electronic Optical and Magnetic Materials law.invention law Optoelectronics current-voltage characteristics Irradiation Electrical and Electronic Engineering business gaas1–хpх defects lcsh:Physics Light-emitting diode |
| Zdroj: | Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 201-207 (2020) |
| ISSN: | 1605-6582 1560-8034 |
| Popis: | Commercial orange and yellow GaAs1–хPх LEDs were irradiated by 2 MeV electrons with fluences of 1014…2·1016 сm–2, and their electrophysical characteristics were investigated in the current and voltage generators modes. It has been shown that point radiation defects introduced into GaAs1–хPх diodes reduce the electrical conductivity of the base. The series and parallel resistances of the device increase, compensating the electrical conductivity of the base and reducing the probability of forming the avalanche breakdown channels. Negative differential resistance regions that appear in current-voltage characteristics are the result of the presence of a GaP sublattice in the solid solution. During irradiation, the switching voltage into the low-level state increases due to expansion of junction depleted region. The streamlined currents increase after irradiation is caused by changing in the free path length of charge carriers. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|