Ferroelectric Second-Order Memristor

Autor: Dmitrii Negrov, Ekaterina Kondratyuk, Andrei Zenkevich, Anastasia Chouprik, Andrey M. Markeev, Vitalii Mikheev, Yury Lebedinskii, Maxim G. Kozodaev, Yury Matveyev, Sergei Zarubin
Rok vydání: 2019
Předmět:
Zdroj: ACS Applied Materials & Interfaces. 11:32108-32114
ISSN: 1944-8252
1944-8244
Popis: While the conductance of a first-order memristor is defined entirely by the external stimuli, in the second-order memristor it is governed by the both the external stimuli and its instant internal state. As a result, the dynamics of such devices allows to naturally emulate the temporal behavior of biological synapses, which encodes the spike timing information in synaptic weights. Here, we demonstrate a new type of second-order memristor functionality in the ferroelectric HfO2-based tunnel junction on silicon. The continuous change of conductance in the p+-Si/Hf0.5Zr0.5O2/TiN tunnel junction is achieved via the gradual switching of polarization in ferroelectric domains of polycrystalline Hf0.5Zr0.5O2 layer, whereas the combined dynamics of the built-in electric field and charge trapping/detrapping at the defect states at the bottom Si interface defines the temporal behavior of the memristor device, similar to synapses in biological systems. The implemented ferroelectric second-order memristor exhibits various synaptic functionalities, such as paired-pulse potentiation/depression and spike-rate-dependent plasticity, and can serve as a building block for the development of neuromorphic computing architectures.
Databáze: OpenAIRE
Externí odkaz: